Photonic crystal nanocavity with a Q factor exceeding eleven million

被引：174

作者：

Asano, Takashi ^{[1
]}

Ochi, Yoshiaki ^{[1
]}

Takahashi, Yasushi ^{[2
]}

Kishimoto, Katsuhiro ^{[1
]}

Noda, Susumu ^{[1
,3
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] Osaka Prefecture Univ, Dept Phys & Elect, Sakai, Osaka 5998570, Japan

[3] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158510, Japan

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 03期

关键词：

SILICON-ON-INSULATOR; SINGLE-QUANTUM-DOT; QUALITY FACTORS; DYNAMIC CONTROL; LASER; CAVITIES; DEFECT; SURFACES; SYSTEM; WAFERS;

D O I：

10.1364/OE.25.001769

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Photonic crystal nanocavities that simultaneously possess small modal volumes and high quality (Q) factors have opened up novel research areas in photonics during this decade. Here, we present an important key for the increase of Q factors to ranges beyond ten million. A systematic investigation on photon lifetimes of air-bridge-type heterostructure nanocavities fabricated from silicon on insulator (SOI) substrates indicated the importance of cleaning the bottom side (buried oxide side) of the nanaocavites. Repeated thermal oxidation and an oxide removal process applied after the removal of the buried oxide layer underneath the nanocavities realized an experimental Q factor greater than eleven million, which is the highest experimental Q ever recorded. The results provide important information not only for Si PC nanocavities but also for general Si nanophotonic devices and photonic electronic convergence systems. (C) 2017 Optical Society of America

引用

页码：1769 / 1777

页数：9

共 45 条

[1] High-Q photonic nanocavity in a two-dimensional photonic crystal [J].

Akahane, Y ;

Asano, T ;

Song, BS ;

Noda, S .

NATURE, 2003, 425 (6961) :944-947

[2] Analysis of the experimental Q factors (∼1 million) of photonic crystal nanocavities [J].

Asano, T ;

Song, BS ;

Noda, S .

OPTICS EXPRESS, 2006, 14 (05) :1996-2002

[3] Measuring the role of surface chemistry in silicon microphotonics [J].

Borselli, M ;

Johnson, TJ ;

Painter, O .

APPLIED PHYSICS LETTERS, 2006, 88 (13)

[4] High-Q silicon photonic crystal cavity for enhanced optical nonlinearities [J].

Dharanipathy, Ulagalandha Perumal ;

Minkov, Momchil ;

Tonin, Mario ;

Savona, Vincenzo ;

Houdre, Romuald .

APPLIED PHYSICS LETTERS, 2014, 105 (10)

[5] Ultrasmall square-lattice zero-cell photonic crystal laser [J].

Ee, Ho-Seok ;

Jeong, Kwang-Yong ;

Seo, Min-Kyo ;

Lee, Yong-Hee ;

Park, Hong-Gyu .

APPLIED PHYSICS LETTERS, 2008, 93 (01)

[6] General recipe for designing photonic crystal cavities [J].

Englund, D ;

Fushman, I ;

Vuckovic, J .

OPTICS EXPRESS, 2005, 13 (16) :5961-5975

[7] Integrated quantum optical networks based on quantum dots and photonic crystals [J].

Faraon, Andrei ;

Majumdar, Arka ;

Englund, Dirk ;

Kim, Erik ;

Bajcsy, Michal ;

Vuckovic, Jelena .

NEW JOURNAL OF PHYSICS, 2011, 13

[8] Heavy-metal (Fe/Ni/Cu) behavior in ultrathin bonded silicon-on-insulator (SOI) wafers evaluated using radioactive isotope tracers [J].

Furihata, JI ;

Nakano, M ;

Mitani, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B) :2251-2255

[9] Investigation of potassium contamination in SOI wafer using dynamic SIMS [J].

Gui, D. ;

Hua, Y. N. ;

Xing, Z. X. ;

Zhao, S. P. .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2007, 7 (02) :369-372

[10] High quality factor in a two-dimensional photonic crystal cavity on silicon-on-insulator [J].

Han, Zheng ;

Checoury, Xavier ;

Haret, Laurent-Daniel ;

Boucaud, Philippe .

OPTICS LETTERS, 2011, 36 (10) :1749-1751

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