Characteristics of homoepitaxial heavily boron-doped diamond films from their Raman spectra

被引：105
|
作者：
Pruvost, F [1 ]
Bustarret, E [1 ]
Deneuville, A [1 ]
机构：
[1] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France
来源：
DIAMOND AND RELATED MATERIALS | 2000年 / 9卷 / 3-6期
关键词：
boron doping; diamond; homoepitaxy; impurity band; metallic conductivity; Raman scattering;
D O I：
10.1016/S0925-9635(99)00241-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
As the boron incorporation level and the wavelength of the exciting laser were varied, we observed systematic modifications of the Raman spectra of homoepitaxial diamond films. A pronounced change in the lineshape of the zone-center optical Raman peak as well as a wide and structured signal at lower wavenumbers appeared simultaneously when the boron incorporation was increased above an abrupt threshold around 3 x 10(20) cm(-1). This threshold was found to depend on the excitation laser wavelength. Possible origins for the wide peaks at 500 and 1225 cm(-1) are also discussed. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：295 / 299
页数：5
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