Ag-Sb-Te system for phase change optical data storage

被引:1
作者
Sharma, YD [1 ]
Bhatnagar, PK [1 ]
机构
[1] Univ Delhi, Dept Elect Sci, New Delhi 110021, India
来源
ADVANCED CHARACTERIZATION TECHNIQUES FOR OPTICAL, SEMICONDUCTOR, AND DATA STORAGE COMPONENTS | 2002年 / 4779卷
关键词
chalcogenide alloy; phase change optical memory; Ag-Sb-Te; DTA; transmittance and reflectance;
D O I
10.1117/12.453720
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For phase change optical data storage, several chalcogenide-based materials have been reported and are expected to replace the conventional magnetic disk. In the present work, preparation and characterization of the chalcogenide alloy Ag (x) - Sb (2 (1-x)) - Te (3) ((1-x)) with different composition (x = 0.16, 0.18 and 0.20) has been presented. Samples were prepared using melt quenching technique and the films were grown by thermal evaporation system. The crystallization process of Ag- Sb- Te material was studied using differential thermal analysis (DTA) and Optical analysis (Transmittance and reflectance) respectively. The films were studied for both cases: before and after annealing. The Differential thermal analysis curves were recorded for different compositions and Glass transition temperature (T (g)), crystallization temperature (T (c)) and melting temperature (T-m) have been obtained. It may also be concluded that T (g) / T (m) ratio is closer to required condition for the phase change optical data storage material. Thermal and optical analysis shows that the Ag - Sb- Te material is a potential candidate for phase change optical data storage. The optimized composition has also been obtained.
引用
收藏
页码:139 / 147
页数:9
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