Growth and Characterization of Vanadium Dioxide/Niobium Doped Titanium Dioxide Heterostructures for Ultraviolet Detection

被引：10

作者：

Creeden, Jason A. ^{[1
]}

Madaras, Scott E. ^{[1
]}

Beringer, Douglas B. ^{[1
]}

Novikova, Irina ^{[1
]}

Lukaszew, Rosa A. ^{[1
]}

机构：

[1] William & Mary Dept Phys, Williamsburg, VA 23187 USA

来源：

ADVANCED OPTICAL MATERIALS | 2019年 / 7卷 / 23期

关键词：

band engineering; photocurrent; quantum efficiency; thin films; vanadium dioxide; QUANTUM EFFICIENCY; OPTICAL-PROPERTIES; BLIND; FILMS; TIO2; VO2; PHOTODETECTOR; PERFORMANCE; RESPONSIVITY; TRANSITION;

D O I：

10.1002/adom.201901143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties of VO2/TiO2:Nb heterostructures are engineered for their potential use in ultraviolet (UV) detection and observed external quantum efficiency (EQE) exceeding 100% in both near UV (405 nm) and UV-C (254 nm) spectral regions. The proposed UV detection scheme is based on vanadium dioxide (VO2) thin films epitaxially grown on niobium doped titanium dioxide (TiO2:Nb). Such VO2/TiO2:Nb heterostructure exhibits enhanced photocurrent due to cation doping engineering in a space-charge region thus yielding favorable conditions for hole tunneling from TiO2:Nb into VO2. The heterostructure is engineered and photocurrent is optimized by varying the VO2 film thickness, reaching up to 5000% EQE for 405 nm and up to 17 000% EQE for 254 nm light, indicating that the VO2/TiO2:Nb system can be fine-tuned for efficient UV photodetection.

引用

页数：7

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