Mg doping and its effect on the semipolar GaN(11(2)over-bar2) growth kinetics

被引：19

作者：

Lahourcade, L. ^{[1
]}

Pernot, J. ^{[2
,3
]}

Wirthmueller, A. ^{[1
]}

Chauvat, M. P. ^{[4
]}

Ruterana, P. ^{[4
]}

Laufer, A. ^{[5
]}

Eickhoff, M. ^{[5
]}

Monroy, E. ^{[1
]}

机构：

[1] INAC SP2M NPSC, CEA Grenoble, Equipe Mixte CEA CNRS Nanophys & Semicond, F-38054 Grenoble, France

[2] CNRS, Inst NEEL, F-38042 Grenoble 9, France

[3] Univ Grenoble 1, F-38042 Grenoble 9, France

[4] CNRS ENSICAEN CEA UCBN, UMR6252, CIMAP, F-14050 Caen, France

[5] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 17期

关键词：

MOLECULAR-BEAM EPITAXY; DOPED GAN; GAN(0001); MAGNESIUM; WURTZITE; DEFECTS;

D O I：

10.1063/1.3256189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the effect of Mg doping on the growth kinetics of semipolar GaN(11 (2) over bar2) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(11 (2) over bar2). We observe an enhancement of Mg incorporation in GaN(11 (2) over bar2) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3256189]

引用

页数：3

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