Surface passivation of GaAs by ultra-thin cubic GaN layer

被引：42
|
作者：
Anantathanasarn, S
Ootomo, S
Hashizume, T
Hasegawa, H
机构：
[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
来源：
APPLIED SURFACE SCIENCE | 2000年 / 159卷
关键词：
surface passivation; GaAs; GaN; nitrogen radicals; XPS; PL;
D O I：
10.1016/S0169-4332(00)00077-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Attempts were made to passivate the GaAs (001) surface by a pseudomorphic ultra-thin cubic GaN layer formed by a nitrogen radical (N-radical) or nitrogen plasma irradiation technique. Reflection high-energy electron diffraction (RHEED) pattern observations and detailed X-ray photoelectron spectroscopy (XPS) analysis have shown that ultra-thin cubic GaN layer on GaAs (001) surface with desirable surface stoichiometry can be realized with the optimization of surface nitridation process parameters. The passivation effects, characterized by ultra-high vacuum photoluminescence (UHV FL) analysis, revealed strong enhancement in band-edge PL intensity of GaAs after passivation as large as a factor of 10 when compared with the as-gown clean molecular beam epitaxy (MBE) GaAs surface. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：456 / 461
页数：6
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