Three-dimensional visualization and characterization of morphology and internal microstructural features of primary silicon crystals in a cast Al-Si base alloy

被引:10
作者
Singh, H. [1 ]
Gokhale, A. M. [1 ]
Mao, Y. [1 ]
Tewari, A. [2 ]
Sachdev, A. K. [3 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Gen Motors, India Sci Lab, Bangalore, Karnataka, India
[3] Gen Motors, Res & Dev, Warren, MI 48092 USA
基金
美国国家科学基金会;
关键词
Crystal morphology; Solidification; Optical microscopy; Bulk crystal growth; Growth from melt; Metals; GROWTH; MECHANISMS;
D O I
10.1016/j.jcrysgro.2009.08.001
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Primary Si crystals are usually present in the cast microstructures of near-eutectic, eutectic, and hyper-eutectic Al-Si base alloys. Three-dimensional digital images of individual primary Si crystals present in a permanent mold cast unmodified Al-12 wt% Si-1 wt% Ni base alloy are reconstructed using a combination of montage serial sectioning and three-dimensional digital image processing techniques. Octahedral, prismatic, and plate-like three-dimensional morphologies of the primary Si crystals are present in the microstructure. Some of the primary Si crystals contain interior regions/islands of Al-alloy that are completely enclosed in the corresponding Si crystals indicating certain variations in the crystal growth velocities during the evolution of these crystals. The boundaries of these interior regions/islands are non-faceted smooth and curved indicating re-melting of the Al-rich islands and re-dissolution of some Si near these internal boundaries in the Al-alloy as a result of the heat generated by liquid-to-solid transformation of Si away from the islands. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:4454 / 4461
页数:8
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