Memristive neuron model with an adapting synapse and its hardware experiments

被引：66
作者：
Bao, BoCheng [1 ]
Zhu, YongXin [1 ]
Ma, Jun [2 ]
Bao, Han [1 ]
Wu, HuaGan [1 ]
Chen, Mo [1 ]
机构：
[1] Changzhou Univ, Sch Microelect & Control Engn, Changzhou 213164, Jiangsu, Peoples R China
[2] Lanzhou Univ Technol, Dept Phys, Lanzhou 730050, Peoples R China
来源：
SCIENCE CHINA-TECHNOLOGICAL SCIENCES | 2021年 / 64卷 / 05期
基金：
中国国家自然科学基金;
关键词：
memristor; neuron model; coexisting firing patterns; nonlinear fitting scheme; hardware experiment;
D O I：
10.1007/s11431-020-1730-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electromagnetic induction effect caused by neuron potential can be mimicked using memristor. This paper considers a flux-controlled memristor to imitate the electromagnetic induction effect of adapting feedback synapse and presents a memristive neuron model with the adapting synapse. The memristive neuron model is three-dimensional and non-autonomous. It has the time-varying equilibria with multiple stabilities, which results in the global coexistence of multiple firing patterns. Multiple numerical plots are executed to uncover diverse coexisting firing patterns in the memristive neuron model. Particularly, a nonlinear fitting scheme is raised and a fitting activation function circuit is employed to implement the memristive mono-neuron model. Diverse coexisting firing patterns are observed from the hardware experiment circuit and the measured results verify the numerical simulations well.
引用
收藏
页码：1107 / 1117
页数：11
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