On the energy band of neutral-beam etched Si/Si0.7Ge0.3 nanopillars

被引：1

作者：

Chuang, Min-Hui ^{[1
]}

Li, Yiming ^{[1
]}

Samukawa, Seiji ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Inst Commun Engn, Parallel & Sci Comp Lab, Hsinchu 300, Taiwan

[2] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / SB期

关键词：

Si nanopillar; energy band; Schrö dinger equation in k space; neutral beam etching; Si0; 7Ge0; 3; fabrication and simulation; density of state;

D O I：

10.35848/1347-4065/abde2a

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, the geometry effects on the energy band of the well-aligned silicon (Si) nanopillars (NPs) embedded in Si0.7Ge0.3 matrix fabricated by neutral beam etching are studied. We formulate and solve the Schrodinger equation with an effective mass approach in k space. The radius, separation, and shape effects on the energy band and density of states of the explored NPs are calculated and discussed. The separation of NPs plays a crucial factor to manipulate the band structure among the aforementioned factors.

引用

页数：4

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