Investigation of boron-doped hydrogenated silicon films as a thermo-sensing layer for uncooled microbolometer

被引：7

作者：

Shin, Choonghoon ^{[1
]}

Duy Phong Pham ^{[2
]}

Park, Jinjoo ^{[3
]}

Lee, Youn-Jung ^{[2
]}

Kim, Sangho ^{[2
]}

Yi, Junsin ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 440746, South Korea

[3] Cheongju Univ, Div Energy & Opt Technol Convergence, Major Energy & Appl Chem, 298 Daeseong Ro, Cheongju, Chungcheongbuk, South Korea

来源：

THIN SOLID FILMS | 2019年 / 690卷

基金：

新加坡国家研究基金会;

关键词：

Uncooled microbolometer; Thermo-sensing layer; Boron-doped hydrogenated silicon films; Mixed-phase; THIN-FILMS; MICROCRYSTALLINE SILICON; POLYMORPHOUS SILICON; FREQUENCY PLASMA; 1/F NOISE; SURFACE; SPECTROSCOPY; BOLOMETERS; DEPOSITION; GERMANIUM;

D O I：

10.1016/j.tsf.2019.137515

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron-doped hydrogenated silicon films are used in thermo-sensing layer in infrared detectors or uncooled microbolometers. Among thermo-sensing materials such as vanadium oxide and amorphous silicon and silicon diodes, amorphous silicon is the most common. Parameters such as the temperature coefficient of resistance (TCR), sheet resistance and 1/f noise are very important for the performance of these devices. One thermo-sensing material in particular, boron-doped hydrogenated silicon (BSi:H), has satisfactory TCR, sheet resistance (R-sheet), and 1/f noise values. The BSi:H films are deposited using radio frequency plasma-enhanced chemical vapor deposition. The dependence of electrical, structural, and chemical properties of the BSi:H films on the plasma parameters is reported. The TCR of the films is 1.0-2.9%/K, R-sheet is 1.2-37.8 M Omega/gamma and crystalline volume fraction is 10.2-68.5%. The properties of the amorphous and mixed-phase are compared. It is found that the 1/f noise of the mixed-phase film is lower than that of the amorphous phase film. These results show that the boron doped mixed-phase silicon films are suitable for use as thermo-sensing layers.

引用

页数：6

共 28 条

[1] Gas phase and surface kinetics in plasma enhanced chemical vapor deposition of microcrystalline silicon: The combined effect of rf power and hydrogen dilution
Amanatides, E
Stamou, S
Mataras, D
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (11) : 5786 - 5798
[2] Low frequency plasma deposition and characterization of Si1-xGex:H,F films
Ambrosio, R
Torres, A
Kosarev, A
Ilinski, A
Zúñiga, C
Abramov, AS
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 91 - 96
[3] INFRARED-SPECTROSCOPY OF SI(111) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY
BURROWS, VA
CHABAL, YJ
HIGASHI, GS
RAGHAVACHARI, K
CHRISTMAN, SB
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (11) : 998 - 1000
[4] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON.
Cowher, M.E.
Sedgwick, T.O.
[J]. 1600, (119):
[5] Effect of chamber pressure on p-type mu c-SiC:H thin films prepared by photo-CVD
Dasgupta, A
Ghosh, S
Kshirsagar, ST
Ray, S
[J]. THIN SOLID FILMS, 1997, 295 (1-2) : 37 - 42
[6] Boron-doped hydrogenated mixed-phase silicon as thermo-sensing films for infrared detectors
Duy Phong Pham
Park, Jinjoo
Shin, Chonghoon
Kim, Sangho
Nam, Yonghyun
Kim, Geunho
Kim, Minsik
Yi, Junsin
[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 74 : 165 - 169
[7] Roles of microcrystalline silicon p layer as seed, window, and doping layers for microcrystalline silicon p-i-n solar cells
Fujibayashi, T
Kondo, M
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (04)
[8] DEFECT FORMATION DURING GROWTH OF HYDROGENATED AMORPHOUS-SILICON
GANGULY, G
MATSUDA, A
[J]. PHYSICAL REVIEW B, 1993, 47 (07) : 3661 - 3670
[9] GANGULY G, 1993, J NON-CRYST SOLIDS, V164, P31, DOI 10.1016/0022-3093(93)90485-G
[10] 1/F NOISE SOURCES
HOOGE, FN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) : 1926 - 1935

← 1 2 3 →