RF characteristic and modeling of the RF MEMS switch packaging

被引：0
|
作者：
Wu Han-qin [1 ]
Liao Xiao-ping [1 ]
机构：
[1] Southeast Univ, Minist Educ, Key Lab MEMS, Nanjing 210096, Peoples R China
来源：
ICEPT: 2006 7TH INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING TECHNOLOGY, PROCEEDINGS | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The RF characteristic of a RF MEMS switch with a package cap was studied in this paper based on simulation and analysis. Simulation was divided into two parts-the edge of the cap and the center of the cap, in order to observe the different effect level between the edge and the center of the cap on the switch. The thickness of the bonding layer and the depth of cavity were changed in simulations so as to detect the key factor which affects the effect level. We combined the simulation results with the microwave theory, calculated the changes of the switch impedance caused by the package cap. The simulated and calculated results were validated using the soft MicroWave Office.
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页码：515 / +
页数：2
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