In this study, an effective method is demonstrated for fabricating titanium sputtering targets, which are used to fabricate thin films in the semiconductor industry. The method is an alternative to the existing electron beam melting (EBM) process under high vacuum. Titanium sputtering targets used in the production of semiconductors must have very low concentrations of gaseous impurities, especially oxygen, as well as metal impurities. Currently, the oxygen concentration in titanium sputtering targets used for industrial purposes is less than 400 ppm. To develop an effective alternative method, powder metallurgy and melting processes were performed to prepare a low-oxygen titanium ingot with less than 400 ppm oxygen. First, titanium powder was deoxidized using calcium vapor, and then the powder was subjected to vacuum arc melting (VAM). The oxygen in the titanium powder was reduced with calcium vapor from an initial concentration of 2200 ppm to 800 ppm, and the resulting powder was melted using VAM, resulting in titanium ingots with low oxygen content, 400 ppm or less. It was also confirmed that all lattice constants, i.e., d, a, c, and c/a, decreased as oxygen concentration decreased in both the titanium powder and the ingots.
