Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering

被引：37
|
作者：
Lee, Jae-Hyeong [1 ]
机构：
[1] Kunsan Natl Univ, Sch Elect & Informat Engn, Gunsan, South Korea
来源：
JOURNAL OF ELECTROCERAMICS | 2009年 / 23卷 / 2-4期
关键词：
ITO film; Sputtering; Powder target; Substrate temperature; TIN OXIDE-FILMS; TRANSPARENT CONDUCTIVE FILMS; INDIUM; CRYSTALLIZATION; MICROSTRUCTURE; PRESSURE; DC;
D O I：
10.1007/s10832-008-9539-6
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Indium tin oxide (ITO) films have been prepared by r.f. magnetron sputtering using powder target. X-ray diffraction analysis indicates that the deposited films were polycrystalline and retained a cubic bixbite structure. The ITO films deposited at low substrate temperature (T (s)) exhibit a (411) preferred orientation but the films deposited at high T (s) prefer a (111) orientation. The substrate temperature was found to significantly affect the electrical properties. As the T (s) was increased, the conductivity of ITO films was improved due to thermally induced crystallization. The lowest resistivity (8.7 x 10(-4) Omega-cm) was obtained from ITO films deposited at 450 A degrees C. However, optical properties of the films were somewhat deteriorated. The infrared (IR) reflectance of the film increases with increasing the substrate temperature.
引用
收藏
页码：554 / 558
页数：5
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