Excitonic emission of BGaN grown on (0001) 6H-SiC by metal-organic vapor-phase epitaxy

被引：19

作者：

Honda, T ^{[1
]}

Kurimoto, M ^{[1
]}

Shibata, M ^{[1
]}

Kawanishi, H ^{[1
]}

机构：

[1] Kohgakuin Univ, Dept Elect Engn, Hachioji, Tokyo 1920015, Japan

来源：

JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷

关键词：

photoluminescence; GaN; MOVPE; boron;

D O I：

10.1016/S0022-2313(99)00565-7

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Reflection and photoluminescence spectra of boron gallium nitride (BGaN) layers were observed. BGaN layers were grown on (0 0 0 1) 6H-SiC substrates without any buffer layers by metal-organic vapor-phase epitaxy (MOVPE). The emission peaks that originated from free-exciton recombination were observed in these layers. The band-gap energy of the BGaN layer was larger than that of the GaN layer. The binding energy of a free exciton in the BGaN layer was 26 meV, which nearly equals that in GaN. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1274 / 1276

页数：3

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