Characterization of frequency tuning using focused ion beam platinum deposition

被引:41
作者
Enderling, Stefan [1 ]
Hedley, John
Jiang, Liudi
Cheung, Rebecca
Zorman, Christian
Mehregany, Mehran
Walton, Anthony J.
机构
[1] Univ Edinburgh, Scottish Microelect Ctr, Edinburgh EH9 3JF, Midlothian, Scotland
[2] Newcastle Univ, Sch Mech & Syst Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[3] Univ Southampton, Sch Engn Sci, Southampton SO17 1BJ, Hants, England
[4] Case Western Reserve Univ, Dept Elect Engn & Comp Sci, Cleveland, OH 44106 USA
关键词
D O I
10.1088/0960-1317/17/2/005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents and characterizes focused ion beam (FIB) platinum (Pt) deposition as a novel frequency tuning method for micromechanical resonators. FIB Pt deposited tuning was performed at room temperature and in contrast to other reported methods, frequency changes were achieved without any device failure. To perform the tuning, Pt was deposited on a 13 mu m x 5 mu m surface area at the free end of 3C silicon carbide (SiC) and polysilicon cantilever resonators in thicknesses ranging from 0.5 mu m to 2.6 mu m. To determine the amount of tuning, the resonant frequency of SiC and polysilicon devices was measured before and after Pt deposition. Frequency measurements performed before Pt deposition found that SiC resonators operated at higher resonant frequencies and quality (Q)-factors than their polysilicon counterparts. Measurements after Pt deposition on SiC and polysilicon resonators confirmed the predicted maximum frequency change of -15.5% made by FEM simulations and analytical modelling. Due to their lower mass, polysilicon resonators showed a larger frequency change than their SiC counterparts. A Q-factor decrease was observed for SiC and polysilicon resonators due to thermoelastic damping associated with the deposited Pt and surface contamination.
引用
收藏
页码:213 / 219
页数:7
相关论文
共 48 条
[1]  
Abdelmoneum MA, 2005, P IEEE INT FREQ CONT, P272
[2]   Capacitance based tunable resonators [J].
Adams, SG ;
Bertsch, FM ;
Shaw, KA ;
Hartwell, PG ;
Moon, FC ;
MacDonald, NC .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1998, 8 (01) :15-23
[3]   High-Q HF microelectromechanical filters [J].
Bannon, FD ;
Clark, JR ;
Nguyen, CTC .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (04) :512-526
[4]  
BOONLIANG B, 2005, P 2005 NAN C TRAD SH, P416
[5]  
Burdess J. S., 1994, Engineering Science and Education Journal, V3, P249, DOI 10.1049/esej:19940603
[6]  
CHIAO M, 2003, 2003 INT C SOL STAT, P1820
[7]  
Clough RW., 1993, Dynamics of Structures
[8]  
Courcimault CG, 2005, TRANSDUCERS '05, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, P875
[9]   Focused ion beams and silicon-on-insulator - a novel approach to MEMS [J].
Daniel, JH ;
Moore, DF ;
Walker, JF .
SMART MATERIALS & STRUCTURES, 2000, 9 (03) :284-290
[10]  
ENDERLING S, 2004, P NAN C TRAD SHOW BO, V3, P421