Synthesis of titanium dioxide TiO2 thin film to achieve resistive switching property for the application of nonvolatile memory

Resistive switching devices have become a topic of interest amongst the scientific community for their use in non-volatile data memories. Resistive switching is a physical phenomenon where a dielectric changes its resistance when a strong electric field is applied. The change in resistance is non-volatile, which is a desirable feature of non-volatile memories and are an important candidate for data storage applications. Fabrication was usually done by means of top down approach but size limitation had become an issue, so bottom up approach became a viable route. The Titanium dioxide (TiO2) nanoparticles were prepared using sol-gel method using Titanium isopropoxide as precursor. The prepared particles were studied using UV-Vis spectroscopy, X-Ray Diffraction (XRD), Energy Dispersive X-Ray spectroscopy (EDX) and Scanning Electron Microscopy (SEM). The band gap of the nanoparticles (NPs) was 3.5 eV, which is higher than that of the bulk TiO2 particles. The prepared NPs had a tetragonal structure. TiO2 thin film was fabricated using the NPs and sandwiched between metal electrodes on a FTO substrate via spin coating and used to study resistive switching characteristics. (C) 2019 Elsevier Ltd. All rights reserved.