In situ site-specific specimen preparation for atom probe tomography

被引:1458
作者
Thompson, K.
Lawrence, D.
Larson, D. J.
Olson, J. D.
Kelly, T. F.
Gorman, B.
机构
[1] Imago Sci Instruments Corp, Madison, WI 53719 USA
[2] Univ N Texas, Denton, TX 76203 USA
关键词
atom probe tomography;
D O I
10.1016/j.ultramic.2006.06.008
中图分类号
TH742 [显微镜];
学科分类号
摘要
Techniques for the rapid preparation of atom-probe samples extracted directly from a Si wafer are presented and discussed. A systematic mounting process to a standardized microtip array allows approximately 12 samples to be extracted from a near-surface region and mounted for subsequent focused-ion-beam sharpening in a short period of time, about 2 It. In addition, site-specific annular mill extraction techniques are demonstrated that allow specific devices or structures to be removed from a Si wafer and analyzed in the atom-probe. The challenges presented by Ga-induced implantation and damage, particularly at a standard ion-beam accelerating voltage of 30 keV, are shown and discussed. A significant reduction in the extent of the damaged regions through the application of a low-energy "clean-up" ion beam is confirmed by atom-probe analysis of the damaged regions. The Ga+ penetration depth into {100} Si at 30 keV is similar to 40 nm. Clean-up with either a 5 or 2 keV beam reduces the depth of damaged Si to similar to 5 nm and < 1 nm, respectively. Finally, a NiSi sample was extracted from a Si wafer, mounted to a microtip array, sharpened, cleaned up with a 5 keV beam and analyzed in the atom probe. The current results demonstrate that specific regions of interest can be accessed and preserved throughout the sample-preparation process and that this preparation method leads to high-quality atom probe analysis of such nano-structures. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:131 / 139
页数:9
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