Highly phosphorus-doped polysilicon films with low tensile stress for surface micromachining using POCl3 diffusion doping

被引：9

作者：

Elbrecht, L ^{[1
]}

Catanescu, R ^{[1
]}

Zacheja, J ^{[1
]}

Binder, J ^{[1
]}

机构：

[1] COLL ADV TECHNOL BOCHUM,DEPT MECHATRON 34,SECT MICROSYST TECHNOL,D-44707 BOCHUM,GERMANY

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1997年 / 61卷 / 1-3期

关键词：

phosphorus oxychloride; polysilicon films; surface micromachining;

D O I：

10.1016/S0924-4247(97)80292-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stress in highly phosphorus-doped polysilicon films for surface micromachining using diffusion doping with POCl3 as dopant source is investigated. The deposition temperature is varied in the range 565 to 620 degrees C, and doping is done at 950 and 850 degrees C, respectively. Wafer curvature measurements and micromachined indicator structures are used to determine the residual stress. A process sequence yielding highly phosphorus-doped polysilicon films with low tensile stress is presented. As no additional high-temperature annealing step is necessary, the films are suitable for integrating surface-micromachined sensors and actuators with microelectronics.

引用

页码：374 / 378

页数：5

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