AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition

被引：34

作者：

Zhu, TG ^{[1
]}

Chowdhury, U ^{[1
]}

Denyszyn, JC ^{[1
]}

Wong, MM ^{[1
]}

Dupuis, RD ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷

关键词：

low press; metalorganic vapor phase epitaxy; nitrides; semiconducting IIIV materials; heterojunction seimconductor devices; light emitting diodes;

D O I：

10.1016/S0022-0248(02)01930-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the electrical and optical characteristics of an AlGaN/AlGaN quantumwell ultraviolet (UV) light-emitting diode (LED) grown on sapphire by metalorganic chemical vapor deposition, The devices operating under room-temperature DC excitation exhibit a peak emission wavelength at 341 nm with a narrow line width of Deltalambda = 10 nm. We also report a ternary AlGaN UV LED grown on sapphire with peak wavelength emission at 302 nm. The device utilized a double heterostructure. along with a Mg-doped AlGaN AlGaN superlattice structure Lis a p-cladding layer. The emission peak exhibits a narrow line width of Deltalambda. = 10 nm. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：548 / 551

页数：4

共 8 条

[1]

Bremser MD, 1996, MRS INTERNET J N S R, V1, pU59

[2] Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers [J].