An XAS study of the defect structure of Ti-doped α-Cr2O3

被引：50

作者：

Blacklocks, Aran N.

Atkinson, Alan

Packer, Robert J.

Savin, Shelley L. P.

Chadwick, Alan V.

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[2] Univ Kent, Sch Phys Sci, Funct Mat Grp, Canterbury CT2 7NH, Kent, England

来源：

SOLID STATE IONICS | 2006年 / 177卷 / 33-34期

关键词：

chromium oxide; XAS; EXAFS; XANES; point defects; gas sensor;

D O I：

10.1016/j.ssi.2006.08.028

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The bulk defect structure in Cr2-xTixO3 (x = 0.05, 0.20 and 0.30) has been studied by X-ray absorption spectroscopy measurements at the Cr and Ti K-edges. The results show that the Ti is predominantly present in the IV oxidation state and resides on the normal Cr host lattice site. The dopant is charge compensated by Cr3+ vacancies and there is evidence for the formation of defect clusters; however, the detailed structure of these clusters could not be deduced. (c) 2006 Elsevier B.V. All rights reserved.

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收藏

页码：2939 / 2944

页数：6

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