High quality GaInP nonlinear photonic crystals with minimized nonlinear absorption

被引：56

作者：

Combrie, Sylvain ^{[1
]}

Tran, Quynh Vy ^{[1
]}

De Rossi, Alfredo ^{[1
]}

Husko, Chad ^{[1
,2
]}

Colman, Pierre ^{[1
,3
]}

机构：

[1] Thales Res & Technol, F-91767 Palaiseau, France

[2] Columbia Univ, Opt Nanostruct Lab, New York, NY 10027 USA

[3] Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 22期

基金：

美国国家科学基金会;

关键词：

energy gap; gallium compounds; III-V semiconductors; indium compounds; optical constants; optical materials; optical waveguides; photonic crystals; Q-factor; self-phase modulation; two-photon processes; HALF BAND-GAP; WAVE-GUIDES; LIGHT; OPTICS; ENHANCEMENT; ALGAAS;

D O I：

10.1063/1.3269998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have established a new material, indium gallium phosphide, lattice matched to gallium arsenide, for two-dimensional photonic crystals at 1.55 mu m. We have demonstrated single-mode cavities with intrinsic Q-factor larger than one million and achieved very large self-phase-modulation coefficient 1.1x10(3) W(1) m(-1) in line-defect waveguides. Importantly, the material band gap is such that two-photon absorption, E(g)>2h omega, is completely suppressed at this important telecommunications wavelength.

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页数：3

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