High quality GaInP nonlinear photonic crystals with minimized nonlinear absorption

被引：56
作者：
Combrie, Sylvain [1 ]
Tran, Quynh Vy [1 ]
De Rossi, Alfredo [1 ]
Husko, Chad [1 ,2 ]
Colman, Pierre [1 ,3 ]
机构：
[1] Thales Res & Technol, F-91767 Palaiseau, France
[2] Columbia Univ, Opt Nanostruct Lab, New York, NY 10027 USA
[3] Lab Photon & Nanostruct, F-91460 Marcoussis, France
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 22期
基金：
美国国家科学基金会;
关键词：
energy gap; gallium compounds; III-V semiconductors; indium compounds; optical constants; optical materials; optical waveguides; photonic crystals; Q-factor; self-phase modulation; two-photon processes; HALF BAND-GAP; WAVE-GUIDES; LIGHT; OPTICS; ENHANCEMENT; ALGAAS;
D O I：
10.1063/1.3269998
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have established a new material, indium gallium phosphide, lattice matched to gallium arsenide, for two-dimensional photonic crystals at 1.55 mu m. We have demonstrated single-mode cavities with intrinsic Q-factor larger than one million and achieved very large self-phase-modulation coefficient 1.1x10(3) W(1) m(-1) in line-defect waveguides. Importantly, the material band gap is such that two-photon absorption, E(g)>2h omega, is completely suppressed at this important telecommunications wavelength.
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页数：3
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