RF characterization and parameter extraction for CMOS device models

被引：3

作者：

Pekarik, John J. ^{[1
]}

Jagannathan, Basanth ^{[1
]}

Pan, Li-Hong ^{[1
]}

Wang, Jing ^{[1
]}

Groves, Robert ^{[1
]}

Li, Hongmei ^{[1
]}

Tian, Xiaowei ^{[1
]}

Greenberg, David R. ^{[1
]}

Jin, Zhenrong ^{[1
]}

Wagner, Lawrence ^{[1
]}

机构：

[1] IBM Corp, Semicond Res & Dev Ctr, Essex Jct, VT 05452 USA

来源：

2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2007年

关键词：

characterization; compact models; parasitics; RFCMOS;

D O I：

10.1109/SMIC.2007.322763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the measurement and extraction of high-frequency compact model parameters of MOSFETs for use in design of RF applications.

引用

页码：36 / +

页数：2

共 6 条

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