Noise-modulated self-polarization effect of impurity doped quantum dots under simultaneous presence of hydrostatic pressure and temperature

We explore the profiles of self-polarization effect (SPE) of doped GaAs QD under simultaneous presence of hydrostatic pressure (HP), temperature and in presence of noise. Noise term carries Gaussian white character and it has been administered to the system via two different pathways; additive and multiplicative. Profiles of SPE have been monitored as a function of HP, temperature and noise strength. Under a given condition of HP and temperature, noise marks its prominent signature on the SPE profile. However, the extent to which noise affects the SPE profile visibly depends on the noise strength and the pathway through which noise is introduced. As interesting observations we have found that SPE exhibits minimization at a pressure of similar to 170.kbar in absence of noise and at similar to 150 kbar when noise is present. Furthermore, in presence of multiplicative noise SPE exhibits a very faint decrease with increase in T up to T similar to 420 K. However, beyond T similar to 420 K, further increase in temperature causes abrupt fall of SPE in a highly sharp way. The findings highlight viable ways of tuning SPE of doped QD system through subtle interplay between HP, temperature and noise.