共 6 条
A transient-enhanced 20μA-Quiescent 200mA-load low-dropout regulator with buffer impedance attenuation
被引:7
作者:
Al-Shyoukh, Mohammad
[1
]
Perez, Raul A.
Lee, Hoi
[2
]
机构:
[1] Texas Instruments Inc, Mixed Signal Automot Grp, Dallas, TX 75266 USA
[2] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75083 USA
来源:
PROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCE
|
2006年
关键词:
D O I:
10.1109/CICC.2006.320835
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This paper demonstrates a 200mA low-dropout regulator (LDO) for portable applications. Buffer impedance attenuation is developed to realize a single-pole loop response through shunt feedback. The LDO is thus unconditionally stable without using an ESR zero and output undershoots and overshoots are minimized during load transients. Implemented in 0.35 mu m twin-well CMOS, the LDO only dissipates 20 mu A quiescent current. With a 1 mu F output capacitor, the maximum transient-output variation is 54mV with full-load step change of 200mA.
引用
收藏
页码:615 / 618
页数:4
相关论文