Half integer quantum Hall effect in high mobility single layer epitaxial graphene

被引：121

作者：

Wu, Xiaosong ^{[1
]}

Hu, Yike ^{[1
]}

Ruan, Ming ^{[1
]}

Madiomanana, Nerasoa K. ^{[1
]}

Hankinson, John ^{[1
]}

Sprinkle, Mike ^{[1
]}

Berger, Claire ^{[1
,2
]}

de Heer, Walt A. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[2] CNRS, Inst Neel, F-38042 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 22期

基金：

美国国家科学基金会;

关键词：

carrier mobility; graphene; quantum Hall effect; semiconductor epitaxial layers; BERRYS PHASE; TRANSISTORS; GAS;

D O I：

10.1063/1.3266524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The quantum Hall effect, with a Berry's phase of pi is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is similar to 20 000 cm(2)/V center dot s at 4 K and 15 000 cm(2)/V center dot s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO2 and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.

引用

页数：3

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