Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography

被引：12

作者：

Han, Bin ^{[1
]}

Shimizu, Yasuo ^{[1
]}

Seguini, Gabriele ^{[2
]}

Arduca, Elisa ^{[2
,3
]}

Castro, Celia ^{[4
]}

Ben Assayag, Gerard ^{[4
]}

Inoue, Koji ^{[1
]}

Nagai, Yasuyoshi ^{[1
]}

Schamm-Chardon, Sylvie ^{[4
]}

Perego, Michele ^{[2
]}

机构：

[1] Tohoku Univ, Oarai Ctr, Inst Mat Res, 2145-2 Narita, Oarai, Ibaraki 3111313, Japan

[2] IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy

[3] Univ Milan, Dipartimento Fis, I-20133 Milan, Italy

[4] Univ Toulouse, CEMES CNRS, nMat Grp, F-31055 Toulouse 4, France

来源：

RSC ADVANCES | 2016年 / 6卷 / 05期

关键词：

ION-BEAM SYNTHESIS; SILICON NANOCRYSTALS; QUANTUM DOTS; SOLAR-CELLS; ABSORPTION; DEPOSITION; MEMORIES; CLUSTERS; ARRAYS; LAYERS;

D O I：

10.1039/c5ra26710b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Single planes of Si nanocrystals (NCs) embedded in a SiO2 matrix were synthesized by annealing SiO2/SiO/SiO2 multilayer structures deposited on Si (100) substrates by e-beam evaporation. The dependence of the shape, size, and areal density of Si NCs on the thickness of the initial SiO layer was investigated using atom probe tomography and validated by energy filtered transmission electron microscopy. Three kinds of samples were prepared with SiO layer thicknesses of 4, 6, and 10 nm. The size of Si NCs enlarged with increasing SiO layer thickness. The shape of Si NCs was mainly extended spheroid in all three kinds of samples. In the sample with the 4 nm-thick SiO layer, the Si NCs were more prolate than those in the other two samples. Moreover, many rod-shaped Si NCs appeared in the sample with the 10 nm-thick SiO layer. These rod-shaped Si NCs were found to be connected by small Si NCs. The areal densities of Si NCs were in the order of 10(12) NCs per cm(2) in all samples.

引用

页码：3617 / 3622

页数：6

共 45 条

[31] Nucleation and growth of Si nanocrystals in an amorphous SiO2 matrix [J].

Riabinina, Daria ;

Durand, Christophe ;

Margot, Joelle ;

Chaker, Mohamed ;

Botton, Gianluigi A. ;

Rosei, Federico .

PHYSICAL REVIEW B, 2006, 74 (07)

[32] Confined phase separation in SiOx nanometric thin layers [J].

Roussel, M. ;

Talbot, E. ;

Pareige, C. ;

Nalini, R. Pratibha ;

Gourbilleau, F. ;

Pareige, P. .

APPLIED PHYSICS LETTERS, 2013, 103 (20)

[33] Phase transformation in SiOx/SiO2 multilayers for optoelectronics and microelectronics applications [J].

Roussel, M. ;

Talbot, E. ;

Nalini, R. Pratibha ;

Gourbilleau, F. ;

Pareige, P. .

ULTRAMICROSCOPY, 2013, 132 :290-294

[34] Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography [J].

Roussel, Manuel ;

Talbot, Etienne ;

Gourbilleau, Fabrice ;

Pareige, Philippe .

NANOSCALE RESEARCH LETTERS, 2011, 6

[35] Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS [J].

Schamm, S. ;

Bonafos, C. ;

Coffin, H. ;

Cherkashin, N. ;

Carrada, M. ;

Ben Assayag, G. ;

Claverie, A. ;

Tence, M. ;

Colliex, C. .

ULTRAMICROSCOPY, 2008, 108 (04) :346-357

[36] Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon [J].

Seguini, G. ;

Castro, C. ;

Schamm-Chardon, S. ;

BenAssayag, G. ;

Pellegrino, P. ;

Perego, M. .

APPLIED PHYSICS LETTERS, 2013, 103 (02)

[37] Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method [J].

Shimizu, Yasuo ;

Takamizawa, Hisashi ;

Inoue, Koji ;

Yano, Fumiko ;

Nagai, Yasuyoshi ;

Lamagna, Luca ;

Mazzeo, Giovanni ;

Perego, Michele ;

Prati, Enrico .

NANOSCALE, 2014, 6 (02) :706-710

[38] New techniques for the analysis of fine-scaled clustering phenomena within atom probe tomography (APT) data [J].

Stephenson, Leigh T. ;

Moody, Michael P. ;

Liddicoat, Peter V. ;

Ringer, Simon P. .

MICROSCOPY AND MICROANALYSIS, 2007, 13 (06) :448-463

[39]

Tiwari S, 1996, APPL PHYS LETT, V68, P1377, DOI 10.1063/1.116085

[40]

Trinh MT, 2012, NAT PHOTONICS, V6, P316, DOI [10.1038/nphoton.2012.36, 10.1038/NPHOTON.2012.36]

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