Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films

被引：8

作者：

Liang, Hailong ^{[1
,2
]}

Zhang, Bo ^{[1
]}

Zhou, Dayu ^{[2
]}

Guo, Xintai ^{[1
]}

Li, Yan ^{[3
]}

Lu, Yanqing ^{[3
]}

Guo, Yuanyuan ^{[3
]}

机构：

[1] AVIC Mfg Technol Inst, Beijing 100024, Peoples R China

[2] Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China

[3] Univ Sci & Technol Liaoning, Sch Mat & Met, Anshan 114051, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2021年 / 47卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Y doped HfO2; Dielectric film; Phase transition; Electronic structure; KAPPA GATE DIELECTRICS; PERFORMANCE; TRANSISTORS; CAPACITANCE; STABILITY; ROUGHNESS; CONTACT; YTTRIUM; OXIDES; ZRO2;

D O I：

10.1016/j.ceramint.2021.01.060

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we introduced a simple solution processing method to prepare yttrium (Y) doped hafnium oxide (HfO2) based dielectric films. The films had high densities, low surface roughness, maximum permittivity of about 32, leakage current < 1.0 x 10(-7) A/cm(2) at 2 MV/cm, and breakdown field >5.0 MV/cm. In addition to dielectric performance, we investigated the influence of YO1.5 fraction on the electronic structure between Y doped HfO2 thin films and silicon (Si) substrates. The valence band electronic structure, energy gap and conduction band structure changed linearly with YO1.5 fraction. Given this cost-effective deposition technique and excellent dielectric performance, solution-processed Y doped HfO2 based thin films have the potential for insulator applications.

引用

页码：12137 / 12143

页数：7

共 44 条

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