A Robust Low Phase Noise Ku band VCO with 23.3% Tuning Range for E-band and V-band Backhaul Transceivers

被引：0

作者：

Levinger, Run ^{[1
]}

Katz, Oded ^{[1
]}

Vovnoboy, Jakob ^{[1
]}

Ben-Yishay, Roee ^{[1
]}

Carmon, Roi ^{[1
]}

Shienman, Benny ^{[1
]}

Mazor, Nadav ^{[1
]}

Elad, Danny ^{[1
]}

机构：

[1] Haifa Univ Campus, IBM Haifa Labs, IL-31905 Haifa, Israel

来源：

PROCEEDINGS OF THE 2015 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC 2015) | 2015年

关键词：

voltage controlled oscillator (VCO); low phase noise; SiGe; E-band; K-u band; PMOS; Colpitts;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a Ku band Gm boosted Colpitts VCO designed in IBM 0.13 mu m SiGe BiCMOS8hp technology for E-Band and V-band backhaul transceivers. The VCO achieves 23.3% tuning range, covering 15.2-19.2 GHz while maintaining low phase noise. Measured phase noise at 10 MHz is lower than -133 dBc/Hz at 25 degrees C. The VCO shows robust behaviour to temperature variations, with a measured frequency drift of less than 15 ppm/C-0. The power consumption is 51.4mW and calculated FOM is -183.5 dBc/Hz.

引用

页码：395 / 396

页数：2