Fabrication of Dual-Barrier Planar Structure Diamond Schottky Diodes by Rapid Thermal Annealing

被引：7

作者：

Wang, Juan ^{[1
]}

Zhao, Dan ^{[1
]}

Shao, Guoqing ^{[1
]}

Liu, Zhangcheng ^{[1
]}

Chang, Xiaohui ^{[1
]}

Chen, Genqiang ^{[1
]}

Wang, Wei ^{[1
]}

Yi, Wenyang ^{[1
]}

Wang, Kaiyue ^{[2
]}

Wang, Hongxing ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Peoples R China

[2] Taiyuan Univ Sci & Technol, Sch Mat Sci & Engn, Taiyuan 030024, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 03期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

Diamond; dual-barrier; power dissipation; rapid thermal annealing (RTA); Schottky barrier diodes (SBDs);

D O I：

10.1109/TED.2020.3048923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fabrication of dual-barrier planar (DBP) structure diamond Schottky barrier diodes (SBDs) with only Ni Schottky contact was carried out by rapid thermal annealing. Ni/Au narrow stripes were first patterned on p(-) layer and annealed at 550 degrees C to decrease Schottky barrier height and form low barrier contact. Then, Ni/Au Schottky electrodes were deposited on the window area between stripes to serve as high barrier contact. Ti/Pt/Au ohmic contact was formed on the back side of p(+) diamond substrate. The fabricated DBP structure SBDs exhibit low forward voltage drops compared with single high barrier diode, and reverse leakage current densities of two to three orders of magnitude smaller than that of single low barrier diode. The influence of stripes area proportion on device properties was investigated and the barrier height can be adjusted by changing dual-barrier ratio. This new device structure displays a small power dissipation of 0.54 W/cm(2), which is a promising technology for high power diamond diodes.

引用

页码：1176 / 1180

页数：5

共 32 条

[1] DIFFUSE-REFLECTANCE FOURIER-TRANSFORM INFRARED STUDY OF THE PLASMA-FLUORINATION OF DIAMOND SURFACES USING A MICROWAVE-DISCHARGE IN CF4
ANDO, T
TANAKA, J
ISHII, M
KAMO, M
SATO, Y
OHASHI, N
SHIMOSAKI, S
[J]. JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1993, 89 (16): : 3105 - 3109
[2] Baliga B.-J., 1993, U.S. Patent, Patent No. [5 262 668, 5262668]
[3] THE PINCH RECTIFIER - A LOW-FORWARD-DROP HIGH-SPEED POWER DIODE
BALIGA, BJ
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 194 - 196
[4] ANALYSIS OF JUNCTION-BARRIER-CONTROLLED SCHOTTKY (JBS) RECTIFIER CHARACTERISTICS
BALIGA, BJ
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (11) : 1089 - 1093
[5] ANALYSIS OF A HIGH-VOLTAGE MERGED P-I-N SCHOTTKY (MPS) RECTIFIER
BALIGA, BJ
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) : 407 - 409
[6] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[7] Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode
Chang, Ting-Fu
Huang, Chih-Fang
Yang, Tsung-Yu
Chiu, Chien-Wei
Huang, Tsung-Yi
Lee, Kung-Yen
Zhao, Feng
[J]. SOLID-STATE ELECTRONICS, 2015, 105 : 12 - 15
[8] Improved electrical parameters of vacuum annealed Ni/4H-SiC (0001) Schottky barrier diode
Gupta, Sanjeev K.
Azam, A.
Akhtar, J.
[J]. PHYSICA B-CONDENSED MATTER, 2011, 406 (15-16) : 3030 - 3035
[9] Vertical GaN trench MOS barrier Schottky rectifier maintaining low leakage current at 200 °C with blocking voltage of 750V
Hasegawa, Kazuya
Nishio, Go
Yasunishi, Kota
Tanaka, Nariaki
Murakami, Noriaki
Oka, Tohru
[J]. APPLIED PHYSICS EXPRESS, 2017, 10 (12)
[10] New unipolar switching power device figures of merit
Huang, AQ
[J]. IEEE ELECTRON DEVICE LETTERS, 2004, 25 (05) : 298 - 301

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