Evolution of electronically active defects during the formation of Si/SiO2 interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurements

被引：13
作者：
Angermann, H
Henrion, W
Rebien, M
Kliefoth, K
Fischer, D
Zettler, JT
机构：
[1] Hahn-Meitner-Institut, Abt. Photovoltaik, D-12489 Berlin
[2] Inst. fur Festkorper-Physik, Technische Universität Berlin, D-10623 Berlin
来源：
MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(97)00012-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The evolution of dangling bond defects on initially H-terminated Si(111) surfaces was correlated to the wet-chemical oxide growth on an atomic scale. The dangling bond induced distribution of interface states was monitored by surface photovoltage measurements. Spectroscopic ellipsometry was used for sensing the surface morphology and oxide coverage.
引用
收藏
页码：43 / 46
页数：4
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