High giant magnetoresistance and thermal annealing effects in perpendicular magnetic [Co/Ni]N-based spin valves

被引：19

作者：

Li, Zhenya ^{[1
,2
]}

Zhang, Zongzhi ^{[1
,2
]}

Zhao, Hui ^{[1
,2
]}

Ma, Bin ^{[1
,2
]}

Jin, Q. Y. ^{[1
,2
,3
]}

机构：

[1] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China

[2] Fudan Univ, Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China

[3] Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 01期

基金：

中国国家自然科学基金;

关键词：

annealing; cobalt; coercive force; diffusion; giant magnetoresistance; iron alloys; magnetic multilayers; manganese alloys; nickel; perpendicular magnetic anisotropy; spin valves; thermal stability; TUNNEL-JUNCTIONS; LAYER; ANISOTROPY; INTERFACE; BARRIER;

D O I：

10.1063/1.3158068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal stability and giant magnetoresistance (GMR) of pseudo- and FeMn-biased spin valves with perpendicular magnetic [Co/Ni](N) multilayer as free and reference layers are investigated. The observed GMR ratio for the pseudo-spin-valve is as high as 7.7%, but it rapidly decreases below 1.0% after annealing in a perpendicular field at 200 degrees C. Such poor temperature stability is ascribed to simultaneous switching of the free and reference multilayers caused by loss of their coercivity difference. In contrast, an FeMn-biased sample with a similar structure has a slightly lower GMR signal of 6.5% but exhibits much better thermal stability, with the GMR reduction occurring at an elevated anneal temperature of over 300 degrees C. This GMR reduction is due to Mn diffusion and a reduction in perpendicular anisotropy.

引用

页数：4

共 18 条

[11] Spin transfer in nanomagnetic devices with perpendicular anisotropy [J].