Resonant impurity band induced by point defects in graphene

被引:20
作者
Huang, Bor-Luen [1 ]
Mou, Chung-Yu [1 ,2 ]
机构
[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30043, Taiwan
[2] Natl Ctr Theoret Sci, Div Phys, Hsinchu, Taiwan
关键词
GRAPHITE;
D O I
10.1209/0295-5075/88/68005
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
It is pointed out that due to direct couplings of electronic states, point defects on graphene are strongly correlated and cannot be treated as independent scatters. In particular, for large on-site defect potential and finite quasi-particle lifetime, we show that defects induce an impurity band with density of state characterized by the Wigner semi-circle law. By including long-range Coulomb interaction, we show that depending on quasi-particle lifetime and defect density, the impurity band may support ferromagnetism. Furthermore, the impurity band can enhance the conductivity of graphene to the order of 4e(2)/h, in agreement with experimental observations. Copyright (C) EPLA, 2009
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页数:6
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