Polymorphism in pentacene thin films on SiO2 substrate

被引：104

作者：

Kakudate, Toshiyuki ^{[1
]}

Yoshimoto, Noriyuki

Saito, Yoshio

机构：

[1] Iwate Univ, Grad Sch Frontier Mat & Funct Engn, Morioka, Iwate 0208551, Japan

[2] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 08期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1063/1.2709516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The polymorphism of pentacene thin films on SiO2 substrate was investigated by grazing incidence x-ray diffractometry (GIXD). The in-plane GIXD patterns were obtained from vacuum deposited ultrathin films. By comparing the in-plane structures with thicker films, it was elucidated that ultrathin films have the same lattice constants as that of films of 100 nm thick. Consistency of determined interplanar d(11) spacings of the two polymorphs suggests the epitaxial growth that bulk phase grows onto thin-film phase. Considering the obtained unit cell parameters, the mechanism of the transformation between polymorphs was discussed in terms of equilibrium shapes during nucleation process. (c) 2007 American Institute of Physics.

引用

页数：3

共 50 条

[41] Laser deposition of thin SiO2 and ITO films
Acquaviva, S
De Giorgi, ML
Elia, L
Fernández, M
Leggieri, G
Luches, A
Martino, M
Zocco, A
APPLIED SURFACE SCIENCE, 2000, 168 (1-4) : 244 - 247
[42] GROWTH OF NiO AND SiO2 THIN FILMS.
Atkinson, A.
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1986, 55 (06): : 637 - 650
[43] The refractive index of homogeneous SiO2 thin films
Mutilin, S. V.
Khasanov, T.
OPTICS AND SPECTROSCOPY, 2008, 105 (03) : 461 - 465
[44] Porous SiO2 thin films for ULSI applications
Joshi, Bhavana N.
Mahajan, A. M.
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 261 - 263
[45] GROWTH OF NIO AND SIO2 THIN-FILMS
ATKINSON, A
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (06): : 637 - 650
[46] Preparation of superhydrophilic mesoporous SiO2 thin films
Chen, Peiyi
Hu, Yun
Wei, Chaohai
APPLIED SURFACE SCIENCE, 2012, 258 (10) : 4334 - 4338
[47] Effects of Substrate Temperature on SiO2 Films Deposited by PECVD
Gao, Shang
Lian, Jie
Song, Ping
Li, Ping
Ma, Zheng
Wang, Xiao
Wu, Shiliang
SILICON PHOTONICS VI, 2011, 7943
[48] Kinetic process of phase separation in CO-SiO2 thin films and preparation of mesoporous SiO2 thin films with mesopore channels aligned perpendicularly to substrate surfaces
Otomo, Junichiro
Kurokawa, Ryo
Takahashi, Hiroshi
Nagamoto, Hidetoshi
VACUUM, 2007, 81 (08) : 1003 - 1011
[49] Morphology identification of the thin film phases of vacuum evaporated pentacene on SIO2 substrates
Dept. Appl. Phys. and Mat. Sci. Ctr., Univ. Groningen, N., Groningen, Netherlands
Synth Met, 3 (175-178):
[50] SOME OPTICAL PROPERTIES OF SIO2 FILMS ON SI SUBSTRATE
VANPHUC, D
ACTA TECHNICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1973, 74 (3-4): : 263 - 274

← 1 2 3 4 5 →