Polymorphism in pentacene thin films on SiO2 substrate

被引：104
作者：
Kakudate, Toshiyuki [1 ]
Yoshimoto, Noriyuki
Saito, Yoshio
机构：
[1] Iwate Univ, Grad Sch Frontier Mat & Funct Engn, Morioka, Iwate 0208551, Japan
[2] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 08期
基金：
日本科学技术振兴机构;
关键词：
D O I：
10.1063/1.2709516
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The polymorphism of pentacene thin films on SiO2 substrate was investigated by grazing incidence x-ray diffractometry (GIXD). The in-plane GIXD patterns were obtained from vacuum deposited ultrathin films. By comparing the in-plane structures with thicker films, it was elucidated that ultrathin films have the same lattice constants as that of films of 100 nm thick. Consistency of determined interplanar d(11) spacings of the two polymorphs suggests the epitaxial growth that bulk phase grows onto thin-film phase. Considering the obtained unit cell parameters, the mechanism of the transformation between polymorphs was discussed in terms of equilibrium shapes during nucleation process. (c) 2007 American Institute of Physics.
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