Current-controlled negative resistance (CCNR) in SiCP-i-N rectifiers

被引：6
|
作者：
Ramungul, N [1 ]
Chow, TP [1 ]
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 03期
关键词：
CCNR; conductivity modulation; double-injection; rectifiers; SiC; 4H-SiC; 6H-SiC;
D O I：
10.1109/16.748867
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an experimental demonstration of a current-controlled negative resistance (CCNR) in the forward characteristics of 6H-SiC P-i-N rectifiers, These forward characteristics indicate that the poor electrical performance of SiC diodes arises because conductivity modulation is not yet established. The cause of this behavior appears to be high defect densities and low minority carrier lifetime in the lightly doped drift region, N+P junctions exhibit excellent forward characteristics with forward drop of 2.8 V at 100 A/cm(2) and 3.9 V at 1000 A/cm(2) without entering the CCNR mode when traps have been filled prior to the measurement.
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页码：493 / 496
页数：4
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