Hole Mobility in Ultrathin Double-Gate SOI Devices: The Effect of Acoustic Phonon Confinement

被引：15
|
作者：
Donetti, Luca [1 ]
Gamiz, Francisco [1 ]
Rodriguez, Noel [1 ]
Godoy, Andres [1 ]
机构：
[1] Univ Granada, Dept Elect & Tecnol Comp, E-18071 Granada, Spain
来源：
IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 12期
关键词：
Hole mobility; MOS devices; silicon-on-insulator technology; simulation; SILICON; PHYSICS;
D O I：
10.1109/LED.2009.2032568
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We show that the effect of phonon confinement in ultrathin double-gate silicon-on-insulator (DGSOI) transistors on hole mobility is weaker than that predicted for electron mobility. To do so, confined phonon modes in SOI devices are computed, employing an elastic continuum model of acoustic phonons in a three-layer structure. A self-consistent k . p-Poisson solver has been developed for the valence-band structure calculation, and Kubo-Greenwood formalism is used to compute the hole mobility in ultrathin DGSOI transistors under the combined effect of confined phonon and surface-roughness scattering.
引用
收藏
页码：1338 / 1340
页数：3
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