Surface properties of Cd2SnO4 ceramics doped with both In and Sb: A study by EELS and photoemission spectroscopy

被引：6

作者：

Dou, Y ^{[1
]}

Egdell, RG ^{[1
]}

机构：

[1] UNIV OXFORD,INORGAN CHEM LAB,OXFORD OX1 3QR,ENGLAND

来源：

SURFACE SCIENCE | 1997年 / 377卷 / 1-3期

关键词：

cadmium tin oxides; ceramics; electron-solid scattering and transmission - inelastic; plasmons; visible and ultraviolet photoelectron spectroscopy; x-ray photoelectron spectroscopy;

D O I：

10.1016/S0039-6028(96)01343-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ceramic samples of Cd2SnO4 doped with 2% In plus 2% or 5% Sb have been studied by electron energy-loss spectroscopy (EELS) and X-ray photoemission spectroscopy and ultraviolet (XPS and UPS). The carrier concentrations derived from surface plasmon energies for these materials are low in comparison with those for purely Sb-doped samples, but high in comparison with 2% In-doped Cd2SnO4. The intensities of the Sb 3d peaks in Cd2SnO4 doped with both In and Sb are lower than those in samples doped only with Sb. This provides direct evidence that In(III) ions substitute on both Cd(II) and Sn(IV) cation sites. UPS shows well-defined conduction bands.

引用

页码：181 / 186

页数：6

共 15 条

[1] SPECTROSCOPIC PROPERTIES OF SEMICONDUCTOR CRYSTALS WITH DIRECT FORBIDDEN ENERGY-GAP [J].