In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate

被引：7
|
作者：
Zhang, ZC [1 ]
Yang, SY [1 ]
Zhang, FQ [1 ]
Xu, B [1 ]
Zeng, YP [1 ]
Chen, YH [1 ]
Wang, ZG [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 247卷 / 1-2期
关键词：
dislocation; interfaces; strain; molecular beam epitaxy; semiconductor IIIV materials;
D O I：
10.1016/S0022-0248(02)01950-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
High-quality In0.25Ga0.75As films were grown on low-temperature (LT) ultra-thin GaAs buffer layers formed on GaAs (0 0 1) substrate by molecular beam epitaxy. The epilayers were studied by atomic force microscopy (AFM), photo luminescence (PL) and double crystal X-ray diffraction (DCXRD), All the measurements indicated that LT thin buffer layer technique is a simple but powerful growth technique for heteroepitaxy. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：126 / 130
页数：5
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