6H-3C SiC structures grown by sublimation epitaxy

被引：4

作者：

Lebedev, AA

Savkina, NS

Strelchuk, AM

Tregubova, AS

Scheglov, MP

机构：

[1] A.F. Ioffe Phys.-Technical Institute, St.Petersburg, 194021

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 46卷 / 1-3期

关键词：

6H-3C structures; sublimation epitaxy; x-ray diffraction;

D O I：

10.1016/S0921-5107(96)01956-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The objective of the present work was to prepare heterojunctions in the 3C-6H system and to investigate their characteristics. The heteroepitaxy was carried out using sublimation epitaxy (SE) in an open system. The presence of 3C-SiC in the deposited structures was confirmed by X-ray diffraction. The p-n junction parameters were investigated from current-voltage and capacitance-voltage measurements, electroluminescence spectrum and DLTS data. (C) 1997 Published by Elsevier Science S.A.

引用

页码：168 / 170

页数：3

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