Electronic structure of dense Pb overlayers on Si(111) investigated using angle-resolved photoemission

被引:43
作者
Choi, W. H.
Koh, H.
Rotenberg, E.
Yeom, H. W. [1 ]
机构
[1] Yonsei Univ, Ctr Atom Wires & Layers, Seoul 120749, South Korea
[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA
来源
PHYSICAL REVIEW B | 2007年 / 75卷 / 07期
关键词
D O I
10.1103/PhysRevB.75.075329
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dense Pb overlayers on Si(111) are important as the wetting layer for anomalous Pb island growth as well as for their own complex "devil's-staircase" phases. The electronic structures of dense Pb overlayers on Si(111) were investigated in detail by angle-resolved photoemission. Among the series of ordered phases found recently above one monolayer, the low-coverage root 7x root 3 and the high-coverage 14x root 3 phases are studied; they are well ordered and form reproducibly in large areas. The band dispersions and Fermi surfaces of the two-dimensional (2D) electronic states of these overlayers are mapped out. A number of metallic surface-state bands are identified for both phases with complex Fermi contours. The basic features of the observed Fermi contours can be explained by overlapping 2D free-electron-like Fermi circles. This analysis reveals that the 2D electrons near the Fermi level of the root 7x root 3 and 14x root 3 phases are mainly governed by strong 1x1 and root 3x root 3 potentials, respectively. The origins of the 2D electronic states and their apparent Fermi surface shapes are discussed based on recent structure models.
引用
收藏
页数:8
相关论文
共 35 条
[1]   Probing interface electronic structure with overlayer quantum-well resonances: Al/Si(111) [J].
Aballe, L ;
Rogero, C ;
Kratzer, P ;
Gokhale, S ;
Horn, K .
PHYSICAL REVIEW LETTERS, 2001, 87 (15) :156801
[2]   Angle-scanned photoemission: Fermi surface mapping and structural determination [J].
Aebi, P ;
Fasel, R ;
Naumovic, D ;
Hayoz, J ;
Pillo, T ;
Bovet, M ;
Agostino, RG ;
Patthey, L ;
Schlapbach, L ;
Gil, FP ;
Berger, H ;
Kreutz, TJ ;
Osterwalder, J .
SURFACE SCIENCE, 1998, 402 (1-3) :614-622
[4]   Electron. coherence in a melting lead monolayer [J].
Baumberger, F ;
Auwärter, W ;
Greber, T ;
Osterwalder, J .
SCIENCE, 2004, 306 (5705) :2221-2224
[5]   Uniform, self-organized, seven-step height Pb/Si(111)-(7X7) islands at low temperatures [J].
Budde, K ;
Abram, E ;
Yeh, V ;
Tringides, MC .
PHYSICAL REVIEW B, 2000, 61 (16) :10602-10605
[6]   First-principles studies of structures and stabilities of Pb/Si(111) [J].
Chan, TL ;
Wang, CZ ;
Hupalo, M ;
Tringides, MC ;
Lu, ZY ;
Ho, KM .
PHYSICAL REVIEW B, 2003, 68 (04)
[7]   Electronic growth of Pb islands on Si(111) at low temperature [J].
Chang, SH ;
Su, WB ;
Jian, WB ;
Chang, CS ;
Chen, LJ ;
Tsong, TT .
PHYSICAL REVIEW B, 2002, 65 (24) :1-6
[8]   STM study of dynamical effects on submonolayer phases of Pb/Si(111) [J].
Custance, O ;
Brihuega, I ;
Veuillen, JY ;
Gómez-Rodríguez, JM ;
Baró, AM .
SURFACE SCIENCE, 2001, 482 :878-885
[9]   Quantum beating patterns observed in the energetics of Pb film nanostructures [J].
Czoschke, P ;
Hong, HW ;
Basile, L ;
Chiang, TC .
PHYSICAL REVIEW LETTERS, 2004, 93 (03) :036103-1
[10]   GROWTH AND MORPHOLOGY OF PB ON SI(111) [J].
GANZ, E ;
HWANG, IS ;
XIONG, FL ;
THEISS, SK ;
GOLOVCHENKO, J .
SURFACE SCIENCE, 1991, 257 (1-3) :259-273