Making Mn Substitutional Impurities in InAs using a Scanning Tunneling Microscope

被引：7

作者：

Song, Young Jae ^{[1
,2
]}

Erwin, Steven C. ^{[3
]}

Rutter, Gregory M. ^{[1
]}

First, Phillip N. ^{[4
]}

Zhitenev, Nikolai B. ^{[1
]}

Stroscio, Joseph A. ^{[1
]}

机构：

[1] NIST, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA

[2] Univ Maryland, Maryland NanoCtr, College Pk, MD 20742 USA

[3] USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA

[4] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 12期

关键词：

VIBRATIONAL-EXCITATION; MOLECULAR-DYNAMICS; SINGLE ATOMS; MANIPULATION; SURFACE;

D O I：

10.1021/nl902575g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We describe in detail an atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mn(ad)) are exchanged one-by-one with surface In atoms (In(su)) to create a Mn surface-substitutional (Mn(In)) and an exchanged In adatom (In(ad)) by an electron tunneling induced reaction Mn(ad) + In(su) -> Mn(In) + In(ad) on the InAs(110) surface. In combination with density-functional theory and high resolution scanning tunneling microscopy imaging, we have identified the reaction pathway for the Mn and In atom exchange.

引用

页码：4333 / 4337

页数：5

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