Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers

被引：34
作者：
Lin, C. -Y. [1 ]
Xin, Y. -C. [2 ]
Li, Y. [1 ]
Chiragh, F. L. [1 ]
Lester, L. F. [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[2] IBM Corp, Syst & Technol Grp, Semicond Solut, Hopewell Jct, NY 12533 USA
来源：
OPTICS EXPRESS | 2009年 / 17卷 / 22期
关键词：
SEGMENTED CONTACT METHOD; 1.55; MU-M; SEMICONDUCTOR-LASERS; DOT LASERS; LOCKING; GAIN; WELL;
D O I：
10.1364/OE.17.019739
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
By extending the net-gain modulation phasor approach to account for the discrete distribution of the gain and saturable absorber sections in the cavity, a convenient model is derived and experimentally verified for the cavity design of two-section passively mode-locked quantum dash (QDash) lasers. The new set of equations can be used to predict functional device layouts using the measured modal gain and loss characteristics as input. It is shown to be a valuable tool for realizing the cavity design of monolithic long-wavelength InAs/InP QDash passively mode-locked lasers. (C) 2009 Optical Society of America
引用
收藏
页码：19739 / 19748
页数：10
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