Realization and characterization of an ITO/AZO/SiO2/p-Si SIS heterojunction

被引：22
作者：
Bo, He [1 ]
Quan, Ma Zhong [1 ]
Jing, Xu [2 ]
Lei, Zhao [1 ]
Sheng, Zhang Nan [1 ]
Feng, Li [1 ]
Cheng, Shen [1 ]
Ling, Shen [1 ]
Jie, Meng Xia [1 ]
Yue, Zhou Cheng [1 ]
Shan, Yu Zheng [3 ]
Ting, Yin Yan [3 ]
机构：
[1] Shanghai Univ, Dept Phys, SHU Solar E PV Lab, Shanghai 200444, Peoples R China
[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[3] Solar Enertech Corp, Shanghai 201206, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2009年 / 46卷 / 04期
关键词：
Indium tin oxide (ITO); Al-doped ZnO (AZO); Sputtering; SIS heterojunction; Current-voltage (I-V) characteristics; FILMS; OPTIMIZATION; CARRIER;
D O I：
10.1016/j.spmi.2009.04.013
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A novel ITO/AZO/SiO2/P-Si SIS heterojunction has been fabricated by low temperature thermal growth of an ultrathin silicon dioxide and RF sputtering deposition of ITO/AZO double films on a p-Si texturized substrate. The crystalline structure and the optical and electrical properties of the ITO/AZO antireflection films were characterized by X-ray diffraction (XRD), UV-VIS spectrophotometry, and four-point probe measurements, respectively. The results show that the ITO/AZO films are of good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 2.3 and 1.075 x 10(-5) A, respectively, and the value Of I-F/I-R (I-F and I-R stand for forward and reverse current, respectively) at 2 V is found to be as high as 16.55. The junction shows fairly good rectifying behavior, indicating the formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of ITO/AZO double films is good enough to transmit the light into the p-Si. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.
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页码：664 / 671
页数：8
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