Photoemission spectroscopy of germanium nanocrystal films

被引:15
作者
Bostedt, C
van Buuren, T
Willey, TM
Franco, N
Möller, T
Terminello, L
机构
[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
[2] Univ Hamburg, Inst Expt Phys 2, D-2000 Hamburg, Germany
[3] DESY, Hamburger Synchrontronstschlungslab HASYLAB, D-2000 Hamburg, Germany
关键词
germanium; nanocrystal; nanoparticle; cluster; photoemission; Ge; 3D; plasmon; valence band; surface; structural disorder;
D O I
10.1016/S0368-2048(02)00146-9
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Photoemission spectroscopy measurements have been performed on films of individual germanium nanocrystals. The Ge 3d core-level photoemission reveals mainly bulk-like coordinated atoms and structural disorder on the nanocrystal surface. The Ge 3d plasmon excitation exhibits a reduced bulk- and an increased surface-plasmon contribution underlining the importance of the surface region to the overall particle electronic structure. In the Ge nanocrystal valence-band photoemission features similar to amorphous-Ge are found, further indicating structural disorder in the surface region of the nanocrystals. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:117 / 124
页数:8
相关论文
共 50 条
[1]   Characterization of Ge-nanocrystal films with photoelectron spectroscopy [J].
Bostedt, C ;
van Buuren, T ;
Willey, TM ;
Nelson, AJ ;
Franco, N ;
Möller, T ;
Terminello, LJ .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 199 :402-405
[2]   Quantum confinement in germanium nanocrystal thin films [J].
Holman, Zachary C. ;
Kortshagen, Uwe R. .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (03) :110-112
[3]   Silicon and Germanium Nanocrystal Thin Films Prepared Using Innovative Nonaqueous Electrophoretic Deposition [J].
Haag, Michael A. ;
Sipe, Jack C. .
NANOTECHNOLOGY 2011: ADVANCED MATERIALS, CNTS, PARTICLES, FILMS AND COMPOSITES, NSTI-NANOTECH 2011, VOL 1, 2011, :375-378
[4]   Magnetic circular dichroism study of ultrathin Ni films by threshold photoemission and angle resolved photoemission spectroscopy [J].
Nakagawa, Takeshi ;
Yamamoto, Isamu ;
Takagi, Yasumasa ;
Yokoyama, Toshihiko .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2010, 181 (2-3) :164-167
[5]   Ultraviolet photoemission and electron loss spectroscopy of oligothiophene films [J].
Chandekar, A ;
Whitten, JE .
SYNTHETIC METALS, 2005, 150 (03) :259-264
[6]   Electrical characterization of a trilayer germanium nanocrystal memory device [J].
Ho, V ;
Tay, MS ;
Moey, CH ;
Teo, LW ;
Choi, WK ;
Chim, WK ;
Heng, CL ;
Lei, Y .
MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) :33-38
[7]   Germanium and Silicon Nanocrystal Thin-Film Field-Effect Transistors from Solution [J].
Holman, Zachary C. ;
Liu, Chin-Yi ;
Kortshagen, Uwe R. .
NANO LETTERS, 2010, 10 (07) :2661-2666
[8]   Study of germanium sulfide thin films by doppler broadening spectroscopy [J].
Samadov, S. ;
Sidorin, A. ;
Alekperov, A. ;
Trung, N. V. M. ;
Mammadov, T. G. ;
Dashdemirov, A. O. ;
Abiyev, A. S. ;
Jabarov, S. H. .
INDIAN JOURNAL OF PHYSICS, 2025,
[9]   Nanocrystal Inks without Ligands: Stable Colloids of Bare Germanium Nanocrystals [J].
Holman, Zachary C. ;
Kortshagen, Uwe R. .
NANO LETTERS, 2011, 11 (05) :2133-2136
[10]   Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy [J].
Calandrini, Eugenio ;
Ortolani, Michele ;
Nucara, Alessandro ;
Scappucci, Giordano ;
Klesse, Wolfgang M. ;
Simmons, Michelle Y. ;
Di Gaspare, Luciana ;
de Seta, Monica ;
Sabbagh, Diego ;
Capellini, Giovanni ;
Virgilio, Michele ;
Baldassarre, Leonetta .
JOURNAL OF OPTICS, 2014, 16 (09)