Germanium junction field effect transistor for cryogenic applications

被引：9
|
作者：
Das, NC
Monroy, C
Jhabvala, M
机构：
[1] NASA, Goddard Space Flight Ctr, Solid State Device Branch, Greenbelt, MD 20771 USA
[2] Raytheon ITSS, Lanham, MD 20706 USA
来源：
SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 06期
关键词：
D O I：
10.1016/S0038-1101(00)00013-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The n-channel germanium junction field effect transistor (Ge-JFET) was designed and fabricated for cryogenic applications. Ideal device current and voltage characteristics were obtained at cryogenic temperatures down to the liquid helium temperature (4.2 K). The Ge-JFET exhibits a superior noise performance at the liquid nitrogen temperature (77 K). From the device current voltage characteristics of n-channel JFETs, it is seen that the transconductance increases monotonically with the lowering of temperature to 4.2 K. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：937 / 940
页数：4
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