MOCVD growth of a stacked InGaN quantum dot structure and its lasing oscillation at room temperature

We have successfully grown a stacked InGaN quantum dot (QD) structure and observed lasing emission from the laser structure with 10-layer stacked InGaN QDs embedded in the active layer at room temperature under optical excitation. A clear threshold could be seen in the relation between the excitation energy and emission intensity. Above the threshold, the emission was strongly polarized in the transverse electric mode, and the line width of the emission spectra was reduced to below 0.1 nm (resolution limit). These results indicate the lasing action in InGaN QD laser at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.