Silicon dioxide coating of CeO2 nanoparticles by solid state reaction at room temperature

被引：51

作者：

Cui, HT ^{[1
]}

Hong, GY ^{[1
]}

Wu, XY ^{[1
]}

Hong, YJ ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Appl Chem, Key Lab Rare Earth Chem & Phys, Changchun 130022, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2002年 / 37卷 / 13期

关键词：

composite; interfaces; nanostructrues; photoelectron spectroscopy;

D O I：

10.1016/S0025-5408(02)00897-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The synthesis Of SiO2 coated CeO2 nanoparticles by humid solid state reaction at room. temperature is described. Transmission electron microscope results show that CeO2 Particles were coated with a layer Of SiO2. Binding energy of Ce 3d(5/2) was shifted from 883.8 to 882.8 eV after coating in the XPS Ce 3d spectra. This confirms the chemical bond formation between SiO32- and Ce4+. Because the surface photovoltage property of CeO2 nanoparticles that were used as core materials in the experiment approaches to that of CeO2 macroparticles, peak P2 (electron transition from 0 2p on surface to Ce 4f) disappeared in the surface photovoltage spectrum of CeO2 nanoparticles. Also, the effect Of SiO2 on the electron transition from 0 2p to Ce 4f results in the lowering of surface photovoltage response intensity of P1 peak (electron transition from 0 2p in bulk to Ce 4f). (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：2155 / 2163

页数：9

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