Anomalous oxygen precipitation near the vacancy and interstitial boundary in CZ-Si wafers

被引：14
|
作者：
Hwang, DH [1 ]
Lee, BY
Yoo, HD
Kwon, OJ
机构：
[1] LG Siltron Inc, Kumi 730350, Kyungbuk, South Korea
[2] Kyungpook Natl Univ, Dept Met Engn, Puk Gu, Taegu 702701, South Korea
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 213卷 / 1-2期
关键词：
silicon; oxygen precipitation; regional division;
D O I：
10.1016/S0022-0248(00)00318-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The behavior of oxygen precipitation was investigated in radial direction using Si wafers with different generation area of vacancy-related defects. Oxygen precipitation is more enhanced in vacancy-rich region than in interstitial-rich region. The behavior of oxygen precipitation in the radial direction is strongly dependent on the size of vacancy-rich region which is related to crystal growth condition. Anomalous oxygen precipitation occurred in the marginal vacancy-rich region and the inner edge of interstitial rich region. In the marginal interstitial-rich region, however, oxygen precipitation is suppressed to nearly zero. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：57 / 62
页数：6
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