Effects of different gases on electrical properties and reliability of Ge MOS capacitors with GeOx/GeOxNy as gate dielectric

被引：0
作者：
Li, C. X. [1 ]
Zhang, Y. Z. [1 ]
Zhu, J. H. [2 ]
机构：
[1] Shenzhen Inst Informat Technol, Shenzhen, Guangdong, Peoples R China
[2] Shenzhen Zhenhua Elect Co, Shenzhen, Peoples R China
来源：
PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON ADVANCES IN ENERGY AND ENVIRONMENTAL SCIENCE 2015 | 2015年 / 31卷
关键词：
Germanium oxide; MOS; Reliability; HFO2;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper, germanium oxides/oxynitrides were prepared in different gases. The effects of different gas ambients on the electrical properties and reliability of Ge MOS capacitors were analyzed. The experiment results showed that the nitride incorporation could improve the performances of Ge MOS capacitors with reduced interface-states and gate leakage current.
引用
收藏
页码：346 / 349
页数：4
相关论文
共 8 条
  • [1] Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge
    Chen, JJH
    Bojarczuk, NA
    Shang, HL
    Copel, M
    Hannon, JB
    Karasinski, J
    Preisler, E
    Banerjee, SK
    Guha, S
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (09) : 1441 - 1447
  • [2] Zirconia grown by ultraviolet ozone oxidation on germanium(100) substrates
    Chi, D
    Chui, CO
    Saraswat, KC
    Triplett, BB
    McIntyre, PC
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 813 - 819
  • [3] Chi On C., 2004, ELECT DEVICE LETT IE, V25, P274
  • [4] Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition
    Kim, H
    McIntyre, PC
    Chui, CO
    Saraswat, KC
    Cho, MH
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (14) : 2902 - 2904
  • [5] Local epitaxial growth of ZrO2 on Ge(100) substrates by atomic layer epitaxy
    Kim, H
    Chui, CO
    Saraswat, KC
    McIntyre, PC
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (13) : 2647 - 2649
  • [6] Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
    Matsubara, Hiroshi
    Sasada, Takashi
    Takenaka, Mitsuru
    Takagi, Shinichi
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (03)
  • [7] Ritenour S. Y. A., 2003, IEDM, P3
  • [8] Deposition of HfO2 on germanium and the impact of surface pretreatments
    Van Elshocht, S
    Brijs, B
    Caymax, M
    Conard, T
    Chiarella, T
    De Gendt, S
    De Jaeger, B
    Kubicek, S
    Meuris, M
    Onsia, B
    Richard, O
    Teerlinck, I
    Van Steenbergen, J
    Zhao, C
    Heyns, M
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (17) : 3824 - 3826
1